| PART |
Description |
Maker |
| HSMS-2800 HSMS-2802 HSMS-2803 HSMS-2804 HSMS-280C |
SURFACE MOUNT RF SCHOTTKY BARRIER DIODES
HSMS-2802 · Low reverse leakage Schottky diode
HSMS-2803 · Low reverse leakage Schottky diode
HSMS-2804 · Low reverse leakage Schottky diode
HSMS-2805 · Low reverse leakage Schottky diode
HSMS-2808 · Low reverse leakage Schottky diode
HSMS-280B · Low reverse leakage Schottky diode
HSMS-280C · Low reverse leakage Schottky diode
HSMS-280E · Low reverse leakage Schottky diode
HSMS-280F · Low reverse leakage Schottky diode
HSMS-280K · Low reverse leakage Schottky diode
HSMS-280L · Low reverse leakage Schottky diode
HSMS-280M · Low reverse leakage Schottky diode
HSMS-280N · Low reverse leakage Schottky diode
HSMS-280R · Low reverse leakage Schottky diode
|
http://
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| CT50E CT35E CT130E CT120E CT200E CT110E |
DIAC (BIDIRECTIONAL DIODE THYRISTOR)|58V V(BO) MAX|50UA I(S)|DO-204AL
DIAC (BIDIRECTIONAL DIODE THYRISTOR)|40V V(BO) MAX|50UA I(S)|DO-204AL
DIAC (BIDIRECTIONAL DIODE THYRISTOR)|138V V(BO) MAX|25UA I(S)|DO-204AL
DIAC (BIDIRECTIONAL DIODE THYRISTOR)|125V V(BO) MAX|25UA I(S)|DO-204AL
DIAC (BIDIRECTIONAL DIODE THYRISTOR)|215V V(BO) MAX|15UA I(S)|DO-204AL
DIAC (BIDIRECTIONAL DIODE THYRISTOR)|118V V(BO) MAX|25UA I(S)|DO-204AL 移民部（双向二极管晶闸管）| 118V五（公报）最大| 25UA我（县）|的DO - 204AL
|
NJR
|
| IXBOD1-23R IXBOD1-23RD IXBOD1-19R IXBOD1-19RD IXBO |
Transient voltage protection
Single Breakover Diode(单穿通二极管)
SINGLE UNIDIRECTIONAL BREAKOVER DIODE|1.55KV V(BO) MAX|15MA I(S)
SINGLE UNIDIRECTIONAL BREAKOVER DIODE|1.75KV V(BO) MAX|15MA I(S)
GT 9C 2#12 7#16 SKT PLUG
3200 V, RVS BLOCKING BOD
SINGLE UNIDIRECTIONAL BREAKOVER DIODE|2.7KV V(BO) MAX|15MA I(S) 单单向击穿二极管| 2.7KV五（公报）最大| 15mA的我（拧
SINGLE UNIDIRECTIONAL BREAKOVER DIODE|2.45KV V(BO) MAX|15MA I(S) 单单向击穿二极管| 2.45KV五（公报）最大| 15mA的我（拧
2100 V, RVS BLOCKING BOD
SINGLE UNIDIRECTIONAL BREAKOVER DIODE|2.05KV V(BO) MAX|15MA I(S) 单单向击穿二极管| 2.05KV五（公报）最大| 15mA的我（拧
3000 V, RVS BLOCKING BOD
2000 V, RVS BLOCKING BOD
SINGLE UNIDIRECTIONAL BREAKOVER DIODE|2.25KV V(BO) MAX|15MA I(S) 单单向击穿二极管| 2.25KV五（公报）最大| 15mA的我（拧
2600 V, RVS BLOCKING BOD
Breakover Diodes 800 V, RVS BLOCKING BOD
SINGLE UNIDIRECTIONAL BREAKOVER DIODE|1.35KV V(BO) MAX|15MA I(S) 单单向击穿二极管| 1.35KV五（公报）最大| 15mA的我（拧
SINGLE UNIDIRECTIONAL BREAKOVER DIODE|3.3KV V(BO) MAX|15MA I(S)
|
IXYS Corporation
IXYS, Corp.
|
| IDT54FCT162374ATPFB IDT54FCT162374TPAB IDT54FCT162 |
FAST CMOS 16-BIT REGISTER (3-STATE)
Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.40 to 3.05; Characteristics rs (ohm) max: 1.8; Characteristics C (pF) max: C1 = 2.60 to 2.90 C3 = 0.97 to 1.08; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.35 to 2.55; Characteristics rs (ohm) max: 0.6; Characteristics C (pF) max: C1=6.62 to 7.02 C4=2.60 to 2.95; Characteristics CVR/CVR: 1/4; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.10 to 2.40; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.38 to 7.92 C2.5 = 3.26 to3.58; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 1.680 to 1.750; Characteristics rs (ohm) max: 1.2; Characteristics C (pF) max: C1 = 21.50 to 24.00 C2 = 12.50 to 14.50; Characteristics CVR/CVR: 1/2; Cl: 17; Package: SFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.43 to 2.57; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.30 to 7.70 C2.5 = 2.90 to 3.18; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.30 to 2.46; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 7.3 to 8.6; Characteristics CVR/CVR: 0.5/2.5; Cl: 7.95; Package: SFP
Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.28 to 2.90; Characteristics rs (ohm) max: 1.1; Characteristics C (pF) max: C1 = 2.90 to 3.30 C3 = 1.12 to 1.30; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.02 to 2.26; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 8.55 to 9.45; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.62 min; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C1 = 14.6 to 15.8 C4 = 5.20 to 5.80; Characteristics CVR/CVR: 1/4; Cl: 5.85; Package: EFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 3.0 min; Characteristics rs (ohm) max: 2; Characteristics C (pF) max: C1 = 41.6 to 49.9 C4 = 10.1 to 14.8; Characteristics CVR/CVR: 1/4; Cl: 12.45; Package: SFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 1.73 to 2.10; Characteristics rs (ohm) max: 0.7; Characteristics C (pF) max: C1 = 2.35 to 2.70 C3 = 1.22 to 1.42; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
|
Integrated Device Technology, Inc.
|
| SS100 SS14 SS13 SS12 SS16 S100 |
Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current 1.0 A.
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
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PanJit International Inc.
PanJit Semiconductors
Pan Jit International Inc.
|
| BAT54AW BAT54AWPBF |
0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
SCHOTTKY DIODE 0.2 Amp
30V 0.2A Schottky Common Anode Diode in a SOT-323 package
|
International Rectifier
|
| BAT54SDW BAT54CDW BAT54ADW BAT54BRW-TP BAT54SDW-TP |
200mWatt, 30Volt Schottky Barrier Diode
DIODE SCHOTTKY 200MW 30V SOT363 0.2 A, 4 ELEMENT, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp.
|
| NSR0240P2T5G |
40V 0.2A low IR SOD-923 Schottky Diode 0.2 A, 40 V, SILICON, SIGNAL DIODE
Schottky Barrier Diode
|
ON Semiconductor
|
| LTC15741 LTC1574CS-5TR LTC1574-3.3-15 LTC1574-5 LT |
High Efficiency Step-Down DC/DC Converters with Internal Schottky Diode; Package: SO; No of Pins: 16; Temperature Range: 0°C to 70°C 1 A SWITCHING REGULATOR, 200 kHz SWITCHING FREQ-MAX, PDSO16
High Efficiency Step-Down DC/DC Converters with Internal Schottky Diode
|
Linear Technology, Corp.
|
| 80CNQ045 80CNQ035 80CNQ040 80CNQSM 80CNQ 80CNQSL 8 |
to 85C, Low Ripple & Noise, High Efficiency up to 82%, Low Profile Plastic Case, Single & Dual Ouputs
SCHOTTKY RECTIFIER
45V 80A Schottky Common Cathode Diode in a D61-8-SM package
45V 80A Schottky Common Cathode Diode in a D61-8-SL package
35V 80A Schottky Common Cathode Diode in a D61-8 package
40V 80A Schottky Common Cathode Diode in a D61-8 package
45V 80A Schottky Common Cathode Diode in a D61-8 package
|
IRF[International Rectifier]
|
| 3.0SMCJ5.0 3.0SMCJ5.0A 3.0SMCJ5.0C 3.0SMCJ5.0CA 3. |
3000W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS 使用3000W表面贴装瞬态电压抑制器
IGBT with Anti-Parallel Diode; Package: PG-TO247-3; Switching Frequency: RC Soft Switching Series 8-60 kHz; Package: TO-247; VCE (max): 1,200.0 V; IC(max) @ 25°: 30.0 A; IC(max) @ 100°: 15.0 A
IGBT with Anti-Parallel Diode; Package: PG-TO247-3; Switching Frequency: RC Soft Switching Series 8-60 kHz; Package: TO-247; VCE (max): 1,200.0 V; IC(max) @ 25°: 30.0 A; IC(max) @ 100°: 15.0 A
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PanJit International, Inc.
Won-Top Electronics Co., Ltd.
WTE[Won-Top Electronics]
http://
|
| BAS70DW-04 BAS70DW-06-TP BAS70TW BAS70DW-05 |
200mW SCHOTTKY BARRIER Diode
DIODE SCHOTTKY 200MW 70V SOT363 0.07 A, 70 V, 4 ELEMENT, SILICON, SIGNAL DIODE
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Micro Commercial Components, Corp.
|
